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a
FEATURES All-In-One Synchronous Buck Driver Bootstrapped High Side Drive One PWM Signal Generates Both Drives Anticross-Conduction Protection Circuitry Pulse-by-Pulse Disable Control
IN VCC
Dual Bootstrapped MOSFET Driver ADP3414
FUNCTIONAL BLOCK DIAGRAM
BST
DRVH OVERLAP PROTECTION CIRCUIT
APPLICATIONS Mobile Computing CPU Core Power Converters Multiphase Desktop CPU Supplies Single-Supply Synchronous Buck Converters Standard-to-Synchronous Converter Adaptations
SW
DRVL
ADP3414
GENERAL DESCRIPTION
The ADP3414 is a dual MOSFET driver optimized for driving two N-channel MOSFETs which are the two switches in a nonisolated synchronous buck power converter. Each of the drivers is capable of driving a 3000 pF load with a 20 ns propagation delay and a 30 ns transition time. One of the drivers can be bootstrapped and is designed to handle the high voltage slew rate associated with "floating" high side gate drivers. The ADP3414 includes overlapping drive protection (ODP) to prevent shoot-through current in the external MOSFETs. The ADP3414 is specified over the commercial temperature range of 0C to 70C and is available in an 8-lead SOIC package.
7V D1 VCC 12V
PGND
ADP3414
BST
CBST DRVH Q1
IN
SW
DELAY +1V DRVL 1V PGND Q2
Figure 1. General Application Circuit
(c)2010 SCILLC. All rights reserved. May 2010 - Rev. 3
Publication Order Number: ADP3414/D
ADP3414-SPECIFICATIONS1(T = 0 C to 70 C, VCC = 7 V, BST = 4 V to 26 V, unless otherwise noted.)
A
Parameter SUPPLY Supply Voltage Range Quiescent Current PWM INPUT Input Voltage High2 Input Voltage Low2 HIGH SIDE DRIVER Output Resistance, Sourcing Current Output Resistance, Sinking Current Transition Times3 (See Figure 2) Propagation Delay3, 4 (See Figure 2) LOW SIDE DRIVER Output Resistance, Sourcing Current Output Resistance, Sinking Current Transition Times3 (See Figure 2) Propagation Delay3, 4 (See Figure 2)
Symbol VCC ICCQ
Conditions
Min 4.15
Typ
Max 7.5 2
Unit V mA V V ns ns ns ns ns ns ns ns
1 2.3
0.8 VBST - VSW = 5 V VBST - VSW = 7 V VBST - VSW = 5 V VBST - VSW = 7 V VBST - VSW = 7 V, CLOAD = 3 nF VBST - VSW = 7 V, CLOAD = 3 nF VBST - VSW = 7 V VBST - VSW = 7 V VCC = 5 V VCC = 7 V VCC = 5 V VCC = 7 V VCC = 7 V, CLOAD = 3 nF VCC = 7 V, CLOAD = 3 nF VCC = 7 V VCC = 7 V 3.0 2.0 1.25 1.0 36 20 65 21 3.0 2.0 1.5 1.0 27 19 30 15 5.0 3.5 2.5 2.5 47 30 86 32 5.0 3.5 3.0 2.5 35 26 35 25
trDRVH tfDRVH tpdhDRVH tpdlDRVH
trDRVL tfDRVL tpdhDRVL tpdlDRVL
NOTES 1 All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods. 2 Logic inputs meet typical CMOS I/O conditions for source/sink current (~1 A). 3 AC specifications are guaranteed by characterization but not production tested. 4 For propagation delays, "tpdh" refers to the specified signal going high; "tpdl" refers to it going low. Specifications subject to change without notice.
Rev. 3 | Page 2 of 9 | www.onsemi.com
-2-
REV. A
ADP3414
ABSOLUTE MAXIMUM RATINGS* ORDERING GUIDE
Model Temperature Package Range Description 8-Lead Standard Small Outline (SOIC) Package Option SOIC-8
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +8 V BST . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +30 V BST to SW . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +8 V SW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5.0 V to +25 V IN . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to VCC + 0.3 V Operating Ambient Temperature Range . . . . . . . 0C to 70C Operating Junction Temperature Range . . . . . . 0C to 125C JA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155C/W JC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W Storage Temperature Range . . . . . . . . . . . . -65C to +150C Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . 300C
*This is a stress rating only; operation beyond these limits can cause the device to be permanently damaged. Unless otherwise specified, all voltages are referenced to PGND.
ADP3414JR 0C to 70C
PIN CONFIGURATION
BST IN NC VCC
1 2 3 4
8
DRVH SW PGND DRVL
ADP3414
TOP VIEW (Not To Scale)
7 6 5
NC = NO CONNECT
PIN FUNCTION DESCRIPTIONS
Pin 1
Mnemonic BST
Function Floating Bootstrap Supply for the Upper MOSFET. A capacitor connected between BST and SW Pins holds this bootstrapped voltage for the high side MOSFET as it is switched. The capacitor should be chosen between 100 nF and 1 F. TTL-level input signal that has primary control of the drive outputs. No Connection Input Supply. This pin should be bypassed to PGND with ~1 F ceramic capacitor. Synchronous Rectifier Drive. Output drive for the lower (synchronous rectifier) MOSFET. Power Ground. Should be closely connected to the source of the lower MOSFET. This pin is connected to the buck-switching node, close to the upper MOSFET's source. It is the floating return for the upper MOSFET drive signal. It is also used to monitor the switched voltage to prevent turnon of the lower MOSFET until the voltage is below ~1 V. Thus, according to operating conditions, the high low transition delay is determined at this pin. Buck Drive. Output drive for the upper (buck) MOSFET.
2 3 4 5 6 7
IN NC VCC DRVL PGND SW
8
DRVH
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADP3414 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
Rev. 3 | Page 3 of 9 | www.onsemi.com
REV. A
-3-
ADP3414
IN
tpdlDRVL
DRVL
tfDRVL
tpdlDRVH
trDRVL
tfDRVH tpdhDRVH trDRVH
DRVH-SW
VTH
VTH
tpdhDRVL
SW 1V
Figure 2. Nonoverlap Timing Diagram (Timing Is Referenced to the 90% and 10% Points Unless Otherwise Noted)
Rev. 3 | Page 4 of 9 | www.onsemi.com
-4-
REV. A
Typical Performance Characteristics- ADP3414
50
T DRVH 5V/DIV R3
TA = 25 C VCC = 5V
T TA = 25 C VCC = 5V R3
TIME - ns
CLOAD = 3nF
DRVH 5V/DIV
45
DRVH @ VCC = 5V
40
DRVH @ VCC = 7V DRVL @ VCC = 5V
IN R2 2V/DIV R1 40ns/DIV DRVL 5V/DIV R2 R1
DRVL 2V/DIV IN 2V/DIV 40ns/DIV
35
30
25
DRVL @ VCC = 7V
20
0
25 50 75 100 JUNCTION TEMPERATURE - C
125
TPC 1. DRVH Fall and DRVL Rise Times
TPC 2. DRVL Fall and DRVH Rise Times
TPC 3. DRVH and DRVL Rise Times vs. Temperature
35 DRVL @ VCC = 7V 30 25 DRVL @ VCC = 5V
55 50 DRVH @ VCC = 5V 45 40
37
32 DRVL @ VCC = 7V 27
TIME - ns
20 15 10 DRVH @ VCC = 7V DRVH @ VCC = 5V
TIME - ns
35 30 25 20 DRVL @ VCC = 5V DRVL @ VCC = 7V
TIME - ns
DRVH @ VCC = 7V
22
17
DRVH @ VCC = 5V DRVH @ VCC = 7V
5 0 0 25 50 75 100 JUNCTION TEMPERATURE - C 125
12
15 10 1.0 2.0 3.0 4.0 LOAD CAPACITANCE - nF 5.0
7 1.0
DRVL @ VCC = 5V 1.5 2.0 2.5 3.0 3.5 4.0 4.5 LOAD CAPACITANCE - nF 5.0
TPC 4. DRVH and DRVL Fall Times vs. Temperature
TPC 5. DRVH and DRVL Rise Times vs. Load Capacitance
TPC 6. DRVH and DRVL Fall Times vs. Load Capacitance
35 30 SUPPLY CURRENT - mA 25 VCC = 7V 20 15 10 5 0 0 200 400 600 800 1000 1200 1400 IN FREQUENCY - kHz VCC = 5V TA = 25 C CLOAD = 3nF SUPPLY CURRENT - mA
8.5 8.0 VCC = 7V 7.5 7.0 6.5 6.0 VCC = 5V 5.5 5.0 0 100 25 50 75 JUNCTION TEMPERATURE - C 125 CLOAD = 3nF fIN = 250kHz
TPC 7. Supply Current vs. Frequency
TPC 8. Supply Current vs. Temperature
Rev. 3 | Page 5 of 9 | www.onsemi.com
REV. A
-5-
ADP3414
THEORY OF OPERATION
The ADP3414 is a dual MOSFET driver optimized for driving two N-channel MOSFETs in a synchronous buck converter topology. A single PWM input signal is all that is required to properly drive the high side and the low side FETs. Each driver is capable of driving a 3 nF load. A more detailed description of the ADP3414 and its features follows. Refer to the Functional Block Diagram.
Low Side Driver
To prevent the overlap of the gate drives during Q2's turn OFF and Q1's turn ON, the overlap circuit provides a internal delay that is set to 50 ns. When the PWM input signal goes high, Q2 will begin to turn OFF (after a propagation delay), but before Q1 can turn ON, the overlap protection circuit waits for the voltage at DRVL to drop to around 10% of VCC. Once the voltage at DRVL has reached the 10% point, the overlap protection circuit will wait for a 20 ns typical propagation delay. Once the delay period has expired, Q1 will begin turn ON.
APPLICATION INFORMATION Supply Capacitor Selection
The low side driver is designed to drive low RDS(ON) N-channel MOSFETs. The maximum output resistance for the driver is 3.5 for sourcing and 2.5 for sinking gate current. The low output resistance allows the driver to have 20 ns rise and fall times into a 3 nF load. The bias to the low side driver is internally connected to the VCC supply and PGND. When the driver is enabled, the driver's output is 180 degrees out of phase with the PWM input. When the ADP3414 is disabled, the low side gate is held low.
High-Side Driver
For the supply input (VCC) of the ADP3414, a local bypass capacitor is recommended to reduce the noise and to supply some of the peak currents drawn. Use a 1 F, low ESR capacitor. Multilayer ceramic chip (MLCC) capacitors provide the best combination of low ESR and small size and can be obtained from the following vendors: Murata TaiyoYuden Tokin GRM235Y5V106Z16 EMK325F106ZF C23Y5V1C106ZP www.murata.com www.t-yuden.com www.tokin.com
The high side driver is designed to drive a floating low RDS(ON) N-channel MOSFET. The maximum output resistance for the driver is 3.5 for sourcing and 2.5 for sinking gate current. The low output resistance allows the driver to have 30 ns rise and fall times into a 3 nF load. The bias voltage for the high side driver is developed by an external bootstrap supply circuit, which is connected between the BST and SW Pins. The bootstrap circuit comprises a diode, D1, and bootstrap capacitor, CBST. When the ADP3414 is starting up, the SW Pin is at ground, so the bootstrap capacitor will charge up to VCC through D1. When the PWM input goes high, the high side driver will begin to turn the high side MOSFET, Q1, ON by pulling charge out of CBST. As Q1 turns ON, the SW Pin will rise up to VIN, forcing the BST Pin to VIN + VC(BST), which is enough gate to source voltage to hold Q1 ON. To complete the cycle, Q1 is switched OFF by pulling the gate down to the voltage at the SW Pin. When the low side MOSFET, Q2, turns ON, the SW Pin is pulled to ground. This allows the bootstrap capacitor to charge up to VCC again. The high-side driver's output is in phase with the PWM input. When the driver is disabled, the high side gate is held low.
Overlap Protection Circuit
Keep the ceramic capacitor as close as possible to the ADP3414.
Bootstrap Circuit
The bootstrap circuit uses a charge storage capacitor (CBST) and a Schottky diode, as shown in Figure 1. Selection of these components can be done after the high side MOSFET has been chosen. The bootstrap capacitor must have a voltage rating that is able to handle the maximum battery voltage plus 5 V. A minimum 50 V rating is recommended. The capacitance is determined using the following equation:
CBST = QGATE VBST
where, QGATE is the total gate charge of the high side MOSFET, and VBST is the voltage droop allowed on the high side MOSFET drive. For example, the IRF7811 has a total gate charge of about 20 nC. For an allowed droop of 200 mV, the required bootstrap capacitance is 100 nF. A good quality ceramic capacitor should be used. A Schottky diode is recommended for the bootstrap diode due to its low forward drop, which maximizes the drive available for the high side MOSFET. The bootstrap diode must have a minimum 40 V rating to withstand the maximum battery voltage plus 5 V. The average forward current can be estimated by:
IF(AVG) QGATE x f MAX
The overlap protection circuit (OPC) prevents both of the main power switches, Q1 and Q2, from being ON at the same time. This is done to prevent shoot-through currents from flowing through both power switches and the associated losses that can occur during their ON-OFF transitions. The overlap protection circuit accomplishes this by adaptively controlling the delay from Q1's turn OFF to Q2's turn ON and by internally setting the delay from Q2's turn OFF to Q1's turn ON. To prevent the overlap of the gate drives during Q1's turn OFF and Q2's turn ON, the overlap circuit monitors the voltage at the SW Pin. When the PWM input signal goes low, Q1 will begin to turn OFF (after a propagation delay), but before Q2 can turn ON, the overlap protection circuit waits for the voltage at the SW Pin to fall from VIN to 1 V. Once the voltage on the SW Pin has fallen to 1 V, Q2 will begin turn ON. By waiting for the voltage on the SW Pin to reach 1 V, the overlap protection circuit ensures that Q1 is OFF before Q2 turns on, regardless of variations in temperature, supply voltage, gate charge, and drive current.
where fMAX is the maximum switching frequency of the controller. The peak surge current rating should be checked in-circuit, since this is dependent on the source impedance of the 5 V supply and the ESR of CBST.
Rev. 3 | Page 6 of 9 | www.onsemi.com
-6-
REV. A
ADP3414
Printed Circuit Board Layout Considerations Typical Application Circuits
Use the following general guidelines when designing printed circuit boards: 1. Trace out the high current paths and use short, wide traces to make these connections. 2. Connect the PGND pin of the ADP3414 as close as possible to the source of the lower MOSFET. 3. The VCC bypass capacitor should be located as close as possible to VCC and PGND Pins.
The circuit in Figure 3 shows how two drivers can be combined with the ADP3160 to form a total power conversion solution for VCC(CORE) generation in a high current Intel CPU computer. Figure 4 gives a similar application circuit for a 45 A AMD processor.
VIN 12V VINRTN
270 F 4 OS-CON 16V C12 C13 C14 C15
R7 20 C23 C24 10 F 10 F C26 4.7 F R6 10 C21 15nF R5 2.4k Q5 2N3904 D1 MBR052LTI R4 4m C9 1F
U2 ADP3414
1 BST 2
C4 4.7 F
Z1 ZMM5236BCT
DRVH 8 SW 7 PGND 6 DRVL 5
Q1 FDB7030L
IN
L1 600nH
3 NC
U1 ADP3160
1 VID4
4
VCC
VCC 16 REF 15 CS- 14 PWM1 13 PWM2 12 CS+ 11
FROM CPU RA 34.0k COC 1.4nF RZ 1.1k RB 11.5k
C22 1nF
C5 1F
Q2 FDB8030L
2 VID3 3 VID2 4 VID1 5 VID0 6 COMP
1200 F 8 OS-CON 2.5V 11m ESR (EACH) D2 MBR052LTI C10 1F + + + + + + + +
VCC (CORE) 1.1V - 1.85V 53.4A
7 FB PWRGND 10 8 CT
GND 9
U3 ADP3414
1 BST 2
C11 C16 C17 C18 C19 C20 C27 C28
VCC (CORE) RTN
C1 150pF
DRVH 8 SW 7 PGND 6 DRVL 5
Q3 FDB7030L
IN
L2 600nH
C2 100pF
R1 1k C6 1F
3 NC 4
VCC
Q4 FDB8030L
NC = NO CONNECT
Figure 3. 53.4 A Intel CPU Supply Circuit
Rev. 3 | Page 7 of 9 | www.onsemi.com
REV. A
-7-
ADP3414
1000 F 6 RUBYCON ZA SERIES C12 C13 C14 C15 C24 C25 R7 20 R4 5m 12V VCC 12V VCCRTN R6 10 C26 4.7 F C21 15nF R5 2.4k Q5 2N3904 D1 MBR052LTI C29 10 F C30 10 F C9 1F Q1 FDB7030L
VIN 5V VINRTN
U2 ADP3414
1 BST 2
C4 4.7 F
Z1 ZMM5236BCT
DRVH 8 SW 7 PGND 6 DRVL 5
IN
L1 600nH
3 NC
U1 ADP3160
1 VID4
4
VCC
VCC 16 REF 15 CS- 14 PWM1 13 PWM2 12 CS+ 11
FROM CPU RA 6.98k COC 4.7nF RZ 750 RB 14.0k
C22 1nF
C5 1F
Q2 FDB7045L
2 VID3 3 VID2 4 VID1 5 VID0 6 COMP 7 FB 8 CT
1000 F 8 RUBYCON ZA SERIES 24m ESR (EACH) D2 MBR052LTI C10 1F + + + + + + + +
VCC (CORE) 1.1V - 1.85V 45A
PWRGD 10 GND 9
U3 ADP3414
1 BST 2
C11 C16 C17 C18 C19 C20 C27 C28
VCC (CORE) RTN
C1 150pF
DRVH 8 SW 7 PGND 6 DRVL 5
Q3 FDB7030L
IN
L2 600nH
C2 100pF
R1 1k C6 1F
3 NC 4
VCC
Q4 FDB7045L
NC = NO CONNECT
Figure 4. 45 A Athlon Duron CPU Supply Circuit
Rev. 3 | Page 8 of 9 | www.onsemi.com
-8-
REV. A
ADP3414
OUTLINE DIMENSIONS 8-Lead Standard Small Outline Package [SOIC] Narrow Body (R-8)
Dimensions shown in millimeters and (inches)
5.00 (0.1968) 4.80 (0.1890)
8 5 4
4.00 (0.1574) 3.80 (0.1497) PIN 1
1
6.20 (0.2440) 5.80 (0.2284)
1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0040) SEATING PLANE
1.75 (0.0688) 1.35 (0.0532) 8 0.25 (0.0098) 0 0.19 (0.0075)
0.50 (0.0196) 0.25 (0.0099)
45
0.51 (0.0201) 0.33 (0.0130)
1.27 (0.0500) 0.41 (0.0160)
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN COMPLIANT TO JEDEC STANDARDS MS-012AA
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